论文信息 - Low-power ferroelectric random access memory embedded in 180nm analog friendly CMOS technology

Low-power ferroelectric random access memory embedded in 180nm analog friendly CMOS technology

An embedded 448kb 2T-2C FRAM, integrated into a 180nm analog process flow, has been developed and qualified for more than 10years data retention at 125°C. Key electrical characteristics of the memory include wide signal margins with no outlier bits, high endurance write/read cycling (>>1015 cycles), stable retention (>>10yrs at 125°C), and extremely low bit error rate following 260°C Pb-free solder board-attach reflow. Results suggest that the technology can find wide use in applications ranging from consumer electronics to automotive where highly reliable embedded memory and analog components are required.

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