论文信息 - Empirical fit to band discontinuities and barrier heights in III–V alloy systems

Empirical fit to band discontinuities and barrier heights in III–V alloy systems

We present a figure summarizing the variation of conduction band discontinuity, valence band discontinuity, and gold Schottky barrier height for binary and ternary III–V semiconductors. This figure, which applies to unstrained material, makes use of the property of transitivity in band alignments, and the observed experimental correlation between barrier heights and band gap discontinuities, to consolidate a wide range of data. The figure should be very useful in the design of novel heterostructure electronic and optical devices.

David J. Frank | Sandip Tiwari | S. Tiwari | D. Frank

[1] F. Stern,et al. Valence band offset in AlAs/GaAs heterojunctions and the empirical relation for band alignment , 1985 .

[2] K. W. Wecht,et al. Measurement of the conduction‐band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N‐n heterojunction by C‐V profiling , 1983 .

[3] F. Flores,et al. Energy barriers and interface states at heterojunctions , 1979 .

[4] S. L. Wright,et al. Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy composition , 1986 .

[5] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[6] Sigurd Wagner,et al. Heterojunction band discontinuities , 1976 .

[7] Klaus Ploog,et al. Molecular beam epitaxy and heterostructures , 1985 .

[8] F. Flores,et al. A simple approach to heterojunctions , 1977 .

[9] G. Stillman,et al. Internal photoemission and band discontinuities at Ga0.47In0.53As‐InP heterojunctions , 1989 .

[10] S. I. Long,et al. Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction by C‐V profiling , 1987 .

[11] Defective Heterojunction Models , 1986 .