Ion and electron track-structure and its effects in silicon: model and calculations

Abstract The dielectric-function-theory was used for systematic calculations of the inelastic interaction-characteristics of electrons and protons with different energies in silicon. An extended comparison of the calculated data with experiment and with the results of other models show that these data can serve as an accurate database for Monte Carlo simulations and other kinds of charged particle transport calculations. The new database was used to calculate the spatial distributions of: (i) the deposited energy by δ-electrons which are ejected by protons, (ii) the distances (from the ion trace) of holes and stopped electrons created in the ionization process and (iii) the separation between holes and electrons. These distributions have been used for the calculation of track-effect-parameters like the restricted LET and the mean prompt (transient) electrical field potentials. In addition to these “meanvalue” characteristics, we calculated the straggling of the ion energy-deposition, which is an important parameter in characterizing the process of single event upset. Similar data were obtained for electrons with energies up to 10 keV. The calculated results are presented in a form which is suitable for various applications, like: microdosimetry, upset events in microelectronics, dose equivalence and others.

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