Strain-induced birefringence in vertical-cavity semiconductor lasers

We describe a new technique to study and control the polarization properties of planar vertical-cavity semiconductor lasers. The technique consists of the application of a controllable amount of strain by means of the thermal expansion that results from local heating in the vicinity of the device. Analytical expressions are derived for the strain and birefringence induced with this hot-spot technique. Experimentally, the relation between strain and birefringence is found to be highly anisotropic; this allows a natural interpretation of the distribution of the native polarization angles.

[1]  F. Koyama,et al.  Engineered polarization control of GaAs/AlGaAs surface-emitting lasers by anisotropic stress from elliptical etched substrate hole , 1993, IEEE Photonics Technology Letters.

[2]  K. Choquette,et al.  Temperature dependence of gain‐guided vertical‐cavity surface emitting laser polarization , 1994 .

[3]  K. Kasahara,et al.  Alternately perpendicular polarisation in chequer-pattern matrix arrays of VCSELs , 1995 .

[4]  D. Parker,et al.  Coefficient of Expansion of GaAs, GaP, and Ga(As, P) Compounds from −62° to 200°C , 1967 .

[5]  M. Adams,et al.  Optical waves in crystals , 1984, IEEE Journal of Quantum Electronics.

[6]  J. P. Harbison,et al.  Polarisation characteristics of quantum well vertical cavity surface emitting lasers , 1991 .

[7]  J. P. Woerdman,et al.  Elasto‐optic anisotropy and polarization orientation of vertical‐cavity surface‐emitting semiconductor lasers , 1996 .

[8]  Daryoosh Vakhshoori,et al.  Symmetry considerations in vertical‐cavity surface‐emitting lasers: Prediction of removal of polarization isotropicity on (001) substrates , 1994 .

[9]  Y. H. Chen,et al.  Polarisation characteristics of InGaAlP/AlGaAs visible vertical cavity surface emitting lasers , 1996 .

[10]  Shinji Tsuji,et al.  Dependence of optical gain on crystal orientation in surface‐emitting lasers with strained quantum wells , 1994 .

[11]  H. Casey,et al.  Heterostructure lasers , 1978 .

[12]  K. Choquette,et al.  Control of vertical-cavity laser polarization with anisotropic transverse cavity geometries , 1994, IEEE Photonics Technology Letters.

[13]  Ichiro Ogura,et al.  Control of light-output polarization for surface-emitting-laser type device by strained active layer grown on misoriented substrate , 1995 .

[14]  S. Timoshenko,et al.  Theory of elasticity , 1975 .

[15]  J. Sapriel,et al.  NEAR-RESONANCE ACOUSTO-OPTICAL INTERACTIONS IN GAAS AND INP , 1994 .

[16]  K. Kasahara,et al.  Complete Polarization Control of 8x8 Vertical-cavity Surface-emitting Laser Matrix Arrays , 1995, Quantum Optoelectronics.

[17]  Arturo Chavez-Pirson,et al.  Polarization properties of a vertical cavity surface emitting laser using a fractional layer superlattice gain medium , 1993 .

[18]  Yong-Hee Lee,et al.  Polarization stabilization of vertical‐cavity top‐surface‐emitting lasers by inscription of fine metal‐interlaced gratings , 1995 .

[19]  V. Geist,et al.  Investigation of lattice strain in proton-irradiated semiconductor materials , 1989 .

[20]  J. P. Woerdman,et al.  ELECTRO-OPTIC EFFECT AND BIREFRINGENCE IN SEMICONDUCTOR VERTICAL-CAVITY LASERS , 1997 .

[21]  J. P. Harbison,et al.  Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasers , 1991 .

[22]  J. P. Woerdman,et al.  Effects of transverse anisotropy on VCSEL spectra , 1994 .

[23]  Kenichi Iga,et al.  Polarisation control for surface emitting lasers , 1991 .

[24]  G. Saunders,et al.  The elastic constants of GaAs from 2 K to 320 K , 1973 .

[25]  M. Ettenberg,et al.  Thermal Expansion of AlAs , 1970 .

[26]  Kent D. Choquette,et al.  Gain-dependent polarization properties of vertical-cavity lasers , 1995 .

[27]  K. Choquette,et al.  Polarization modulation of cruciform vertical-cavity laser diodes , 1994 .

[28]  S. Adachi GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications , 1985 .

[29]  Shigeru Nakagawa,et al.  InGaAs/GaAs vertical-cavity surface-emitting lasers on (311)B GaAs substrate , 1995 .

[30]  Kenichi Iga,et al.  Stress effect for polarisation control of surface emitting lasers , 1992 .

[31]  D. Lovett,et al.  Tensor Properties of Crystals , 1989 .