AlN Waveguide with GaN/AlN Quantum Wells for All-Optical Switch Utilizing Intersubband Transition

We report the first successful realization of an AlN-waveguide-based intersubband transition device prepared using both metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) techniques to grow AlN-cladding GaN/AlN quantum wells. An intersubband absorption wavelength of as short as 1.3 µm is confirmed with a new measurement method using an ultrawide-spectrum light source. With this method, the intersubband absorption spectra of an AlN high-mesa waveguide can be directly observed for the first time. The intersubband absorption saturation measurements also show a good device characteristic with a saturation of 7 dB for a transverse magnetic (TM) polarized input pulse energy of 200 pJ.

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