论文信息 - Improved CMOS-integrated photodiodes and their application in OEICs

Improved CMOS-integrated photodiodes and their application in OEICs

Optoelectronic integrated circuits (OEICs) in CMOS technology are investigated. The transient response of integrated PIN photodiodes is calculated analytically and by device simulations. The transient response of the CMOS-integrated photodiodes can be improved by reducing the doping concentration in the epitaxial I-layer. The application of PIN-CMOS-OEICs as high-speed photoreceivers is possible, consequently.

H. Zimmermann | H. Zimmermann

[1] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[2] K. Nakao,et al. Si-OEIC with a built-in PIN-photodiode , 1995 .

[3] C. Lu,et al. High-performance salicide shallow-junction CMOS devices for submicrometer VLSI application in twin-tub VI , 1989 .

[4] Horst Zimmermann. Monolithic bipolar-, CMOS-, and BiCMOS-receiver OEICs , 1996, 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings.

[5] J. Bowers,et al. Ultrawide-band long-wavelength p-i-n photodetectors , 1987 .

[6] G. Lucovsky,et al. Transit-time considerations in p-i-n diodes. , 1964 .