Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW

The InGaN multiquantum-well-structure laser diode (LD) was grown on epitaxially laterally overgrown GaN on sapphire. The LDs with cleaved mirror facets showed an output power as high as 420 mW per facet under room temperature continuous-wave (CW) operation. The fundamental transverse mode was observed up to an output power of 100 mW. The lifetime of the LDs at a constant output power of 30 mW was longer than 160 h under CW operation at an ambient temperature of 50°C. The wavelength drift caused by the temperature change was estimated to be 0.06 nm/K, while that of the red AlInGaP LDs was 0.3 nm/K.