Practical Design and Implementation Procedure of an Interleaved Boost Converter Using SiC Diodes for PV Applications

The implementation of an interleaved boost converter (IBC) using SiC diodes for photovoltaic (PV) applications is presented in this paper. The converter consists of two switching cells sharing the PV panel output current. Their switching patterns are synchronized with 180° phase shift. Each switching cell has a SiC Schottky diode and a CoolMOS switching device. The SiC diodes provide zero reverse-recovery current ideally, which reduces the commutation losses of the switches. Such an advantage from the SiC diodes enables higher efficiency and higher power density of the converter system by reducing the requirement of the cooling system. This paper presents also an optimization study of the size and efficiency of the IBC. Based on 1) the steady-state characteristic of the topology; 2) the static and dynamic characteristics of the switching cells; 3) the loss model of the magnetic components; and 4) the cooling system design, the paper provides a set of design criteria, procedures, and experimental results for a 2.5 kW IBC prototype using SiC diodes.

[1]  Francisco Canales,et al.  A Circuit-Level Analytical Study on Switching Behaviors of SiC Diode at Basic Cell for Power Converters , 2008, 2008 IEEE Industry Applications Society Annual Meeting.

[2]  Chung-Yuen Won,et al.  A Real Maximum Power Point Tracking Method for Mismatching Compensation in PV Array Under Partially Shaded Conditions , 2011, IEEE Transactions on Power Electronics.

[3]  A. Agarwal,et al.  SiC Power Devices for Microgrids , 2010, IEEE Transactions on Power Electronics.

[4]  Quan Li,et al.  A Review of the Single Phase Photovoltaic Module Integrated Converter Topologies With Three Different DC Link Configurations , 2008, IEEE Transactions on Power Electronics.

[5]  Yi Zhao,et al.  Design and Analysis of a Grid-Connected Photovoltaic Power System , 2010, IEEE Transactions on Power Electronics.

[6]  M. Corradin,et al.  Performance evaluation of a Schottky SiC power diode in a boost PFC application , 2002 .

[7]  G. Deboy,et al.  Matched pair of CoolMOST/sup TM/ transistor with SiC-Schottky diode-advantages in application , 2001, Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248).

[8]  Chung-Yuen Won,et al.  Interleaved Soft-Switching Boost Converter for Photovoltaic Power-Generation System , 2011, IEEE Transactions on Power Electronics.

[9]  Z.J. Shen,et al.  New Physical Insights on Power MOSFET Switching Losses , 2009, IEEE Transactions on Power Electronics.

[10]  John E. Fletcher,et al.  Airgap fringing flux reduction in inductors using open-circuit copper screens , 2005 .

[11]  Nicholas DeCristofaro,et al.  Amorphous Metals in Electric-Power Distribution Applications , 2002 .

[12]  B. J. Baliga,et al.  Comparison of 6H-SiC, 3C-SiC, and Si for power devices , 1993 .

[13]  T. Chow,et al.  A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications , 1999, Conference Record of the 1999 IEEE Industry Applications Conference. Thirty-Forth IAS Annual Meeting (Cat. No.99CH36370).

[14]  F.C. Lee,et al.  Analytical loss model of power MOSFET , 2006, IEEE Transactions on Power Electronics.

[15]  Diego G. Lamar,et al.  Comparing Si and SiC diode performance in commercial AC-to-DC rectifiers with power-factor correction , 2006, IEEE Transactions on Industrial Electronics.

[16]  Yao-Ching Hsieh,et al.  An Interleaved Boost Converter With Zero-Voltage Transition , 2009, IEEE Transactions on Power Electronics.

[17]  B. Ozpineci,et al.  Characterization of SiC Schottky diodes at different temperatures , 2003, IEEE Power Electronics Letters.

[18]  Yu Fang,et al.  A Novel PV Microinverter With Coupled Inductors and Double-Boost Topology , 2010, IEEE Transactions on Power Electronics.

[19]  M.M. Jovanovic,et al.  Open-Loop Control Methods for Interleaved DCM/CCM Boundary Boost PFC Converters , 2008, IEEE Transactions on Power Electronics.

[20]  B. Ozpineci,et al.  A 55 kW three-phase inverter with Si IGBTs and SiC Schottky diodes , 2006, Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006. APEC '06..

[21]  S Ahmed,et al.  High-Performance Adaptive Perturb and Observe MPPT Technique for Photovoltaic-Based Microgrids , 2011, IEEE Transactions on Power Electronics.

[22]  A. Radun,et al.  A 1-MHz hard-switched silicon carbide DC–DC converter , 2003, IEEE Transactions on Power Electronics.

[23]  N. Decristofaro Links of Science & Technology , 1998 .