Characteristics of ablation plasma produced by pulsed light ion beam interaction with targets and applications to materials science
暂无分享,去创建一个
Weihua Jiang | N. Hashimoto | K. Yatsui | Weihua Jiang | K. Yatsui | H. Shinkai | Katsuhiko Ohtomo | K. Ohtomo | N. Hashimoto | H. Shinkai
[1] Kiyoshi Yatsui,et al. Industrial applications of pulse power and particle beams , 1989 .
[2] Kiyoshi Yatsui,et al. Preparation and characteristics of ZnS thin films by intense pulsed ion beam , 1988 .
[3] C. Grigoriu,et al. Low-temperature preparation of BaTiO3 thin films by intense, pulsed, ion beam evaporation , 1996 .
[4] Heinrich Hora,et al. Laser Interaction and Related Plasma Phenomena , 2005 .
[5] K. Yatsui,et al. Applications of intense pulsed ion beam to materials science , 1994 .
[6] X. Kang,et al. Characteristics of Ablation Plasma Produced by Intense, Pulsed, Ion Beam , 1994 .
[7] Constantin Grigoriu,et al. Preparation of Thin Films and Nanosize Powders by Intense, Pulsed Ion Beam Evaporation , 1997 .
[8] Mikko Ritala,et al. Atomic layer epitaxy growth of aluminum oxide thin films from a novel Al(CH3)2Cl precursor and H2O , 1997 .
[9] H. Yamamoto,et al. Preparation of BaTiO3 thin films by backside pulsed ion‐beam evaporation , 1996 .
[10] K. Yatsui,et al. Particle‐in‐cell simulation of spherical plasma focus diode , 1995 .
[11] S. Stephanakis,et al. Film deposition and surface modification using intense pulsed ion beams , 1995 .
[12] M. Yokoyama,et al. Quick Deposition of ZuS:Mn Electroluminescent Thin Films by Intense, Pulsed, Ion Beam Evaporation , 1989 .