Challenges for the 100-nm node

As the semiconductor industry accelerates its pace to move to 100-nm lithography node, a shift in exposure wavelength from 248 nm to 193 nm seems to be inevitable. Correspondingly, the change of wavelength and the desire to maintain or improve productivity offers some big challenges that must be resolved in order to continue our march into sub-wavelength optical lithography. This paper discusses a number of challenges that must be addressed, and offers how some of them can be addressed with advanced technology used by full-field catadioptric scanning lithography systems.