An X-ray photoelectron spectroscopy study of the oxides of GaAs

Abstract In this paper, by the use of X-ray photoelectron spectroscopy, we unequivocally identify the oxides present on GaAs surfaces and accurately measure the binding energies associated with the 2p 3/2 , 3d, and Auger lines in the X-ray photoemission spectra. These measurements intended to provide reliable reference data for further work. We conducted an extensive analysis of the oxidation states of Ga metal and oxide powder reference samples, air exposed GaAs wafers, and wafers subjected to various surface treatments (argon plasma treatments and boiling). Based on this experimental evidence, an assignment of the photoelectron peaks to various chemical states is proposed.

[1]  J. Wolan,et al.  Room-temperature oxidation of a GaAs(001) surface induced by the interaction of hyperthermal atomic oxygen and studied by x-ray photoelectron spectroscopy and ion scattering spectroscopy , 1998 .

[2]  P. Alnot,et al.  An X-ray photoelectron spectroscopy study of chemically etched GaAs , 1985 .

[3]  P. Breeze,et al.  An Investigation of Anodically Grown Films on GaAs Using X‐Ray Photoelectron Spectroscopy , 1980 .

[4]  Jean Massies,et al.  Substrate chemical etching prior to molecular‐beam epitaxy: An x‐ray photoelectron spectroscopy study of GaAs {001} surfaces etched by the H2SO4‐H2O2‐H2O solution , 1985 .

[5]  K. Roberts,et al.  The local atomic structure of the oxide coating on polished GaAs(100) , 1990 .

[6]  Z. Lu,et al.  Ultraviolet‐ozone oxidation of GaAs(100) and InP(100) , 1993 .

[7]  I. Ochiai,et al.  Atomic hydrogen cleaning of GaAs and InP surfaces studied by photoemission spectroscopy , 1994 .

[8]  J. Sullivan,et al.  SURFACE MODIFICATION OF (100) N-GAAS BY RADIO FREQUENCY HYDROGEN PLASMAS , 1998 .

[9]  Allan,et al.  Electronic structure of binary and ternary Ga or As oxides. , 1992, Physical review. B, Condensed matter.

[10]  H. Kato,et al.  Structure of GaAs-In0.2Ga0.8As heterojunction interface studied by electron spectroscopies: X-ray photoelectron spectroscopy, tunable electron energy loss spectroscopy and Auger electron spectroscopy , 1987 .

[11]  A. Wee,et al.  Surface and interface analysis of GaSbGaAs semiconductor materials , 1996 .

[12]  P. Bertrand.  XPS study of chemically etched GaAs and InP , 1982 .

[13]  P. Larsen,et al.  Core level photoemission study of the interaction of plasmas with real GaAs(100) surfaces , 1985 .

[14]  G. W. Kammlott,et al.  An X‐Ray Photoelectron Spectroscopy Study of Native Oxides on GaAs , 1979 .

[15]  M. Gendry,et al.  Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers. , 1994, Physical review. B, Condensed matter.

[16]  Z. Deng,et al.  Time-resolved measurement of surface band bending of cleaved GaAs(110) and InP(110) by high resolution XPS , 2000 .

[17]  R. Walle,et al.  ON THE RELATIONSHIP BETWEEN INTERFACIAL DEFECTS AND SCHOTTKY-BARRIER HEIGHT IN AG, AU, AND AL/N-GAAS CONTACTS. , 1993 .

[18]  Y. Katayama,et al.  Characterization of Oxidized GaAs (001) Surfaces Using Temperature Programed Desorption and X-Ray Photoelectron Spectroscopy , 1992 .

[19]  J. Comyn.  Practical surface analysis, 2nd edition , 1992 .

[20]  S. Shapoval,et al.  XPS investigation of the interaction between ECR-excited hydrogen and the native oxide of GaAs (100) , 1992 .

[21]  V. M. Donnelly,et al.  Ammonia plasma passivation of GaAs in downstream microwave and radio‐frequency parallel plate plasma reactors , 1993 .

[22]  C. Bianchi,et al.  XPS analysis of gallium oxides , 1994 .

[23]  B. F. Lewis,et al.  X‐ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs (100) molecular beam epitaxial substrates in in situ heating , 1983 .

[24]  Modification of GaAs surface stoichiometry and reactivity induced by a hydrogen plasma , 1993 .

[25]  X-ray photoelectron spectroscopy study of GaAs surface exposed to a rf hydrogen plasma , 1993 .

[26]  K. Geib,et al.  The thermal oxidation of AlGaAs , 1991 .

[27]  A. Etcheberry,et al.  Reactivity of III–V and II–VI semiconductors toward hydrogen: surface modification and evolution in air , 1995 .

[28]  A. Wee,et al.  ARXPS analysis of surface compositional change in ion bombarded GaAs (100) , 1997 .

[29]  J. L. Sacedón,et al.  The chemistry of O in reduction processes of the GaAs native oxides , 1992 .

[30]  N. Velchev,et al.  XPS study of residual oxide layers on p-GaAs surfaces , 1997 .

[31]  R. Nishitani,et al.  Quantitative Chemical Depth Profiles of Anodic Oxide on GaAs Obtained by X‐Ray Photoelectron Spectroscopy , 1979 .

[32]  W. Jaegermann,et al.  XPS analysis of wet chemical etching of GaAs(110) by Br2–H2O: comparison of emersion and model experiments , 2000 .