A 100-GHz monolithic cascode InAlAs/InGaAs HEMT oscillator

The design, fabrication, and experimental characteristics of a 100-GHz monolithic cascode HEMT oscillator are presented. A cascode pair of InAlAs/InGaAs HEMT's has been used as the active cell to enhance the negative resistance so that more process tolerance can be achieved. The monolithic circuit oscillates around 100 GHz with an output power of 2 dBm at a drain bias voltage as small as 0.9 V. This is the first demonstration of cascode HEMT oscillators at W-band.<<ETX>>

[1]  K. L. Tan,et al.  Submicron pseudomorphic double heterojunction InAlAs/In/sub 0.7/Ga/sub 0.3/As HEMTs with high cut-off and current-drive capability , 1993, 1993 (5th) International Conference on Indium Phosphide and Related Materials.

[2]  M. Glenn,et al.  100 GHz high-gain InP MMIC cascode amplifier , 1990, 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC).

[3]  S. Bandy,et al.  High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz , 1990 .

[4]  G. S. Dow,et al.  Monolithic W-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs , 1992, GaAs IC Symposium Technical Digest 1992.

[5]  April Brown,et al.  InP-based HEMTs for the realization of ultra-high efficiency millimeter wave power amplifiers , 1993, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

[6]  Youngwoo Kwon,et al.  Large Signal Analysis and Experimental Characteristics of Monolithic InP-Based W-Band HEMT Oscillators , 1991, 1991 21st European Microwave Conference.

[7]  Dimitris Pavlidis,et al.  A D-band monolithic fundamental oscillator using InP-based HEMT's , 1993 .