Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure
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Hiroshi Nakashima | Dong Wang | Keisuke Yamamoto | Takayuki Maekura | H. Nakashima | Dong Wang | Sho Kamezawa | K. Yamamoto | T. Maekura | Sho Kamezawa
[1] M. Oehme,et al. Direct bandgap narrowing in Ge LED's on Si substrates. , 2013, Optics express.
[2] I. Sagnes,et al. Schottky electroluminescent diodes with n-doped germanium , 2014 .
[3] Toshiyuki Mine,et al. Germanium fin light-emitting diode , 2011 .
[4] Jesse Lu,et al. Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate. , 2009, Optics express.
[5] Tomonori Nishimura,et al. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface , 2007 .
[6] Haigui Yang,et al. Schottky Source/Drain Ge Metal–Oxide–Semiconductor Field-Effect Transistors with Directly Contacted TiN/Ge and HfGe/Ge Structures , 2012 .
[7] Liping Luo,et al. Electroluminescence from Ge on Si substrate at room temperature , 2009 .
[8] M. Oehme,et al. Direct band gap luminescence from Ge on Si pin diodes , 2012 .
[9] Chao He,et al. Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate , 2014 .
[10] E. K. Evangelou,et al. Fermi-level pinning and charge neutrality level in germanium , 2006 .
[11] H. Nakashima,et al. Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge , 2014 .
[12] Y. Terada,et al. Time-resolved electroluminescence of bulk Ge at room temperature , 2013 .
[13] Haigui Yang,et al. Ohmic contact formation on n-type Ge by direct deposition of TiN , 2011 .
[14] Hui Chen,et al. On-Chip Optical Interconnect Roadmap: Challenges and Critical Directions , 2005, IEEE Journal of Selected Topics in Quantum Electronics.
[15] F.J. Leonberger,et al. Optical interconnections for VLSI systems , 1984, Proceedings of the IEEE.
[16] J. Schulze,et al. Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes , 2014 .
[17] Jurgen Michel,et al. Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes. , 2009, Optics letters.