论文信息 - Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices - 字舞流文

Improving the performance of Ge2Sb2Te5 materials via nickel doping: Towards RF-compatible phase-change devices

Gary A. Sevison | M. Asheghi | K. Goodson | A. Sood | A. Sarangan | J. Hendrickson | I. Agha | J. Burrow | Pengfei Guo