论文信息 - Ultra thin (<3 nm) high quality nitride/oxide stack gate dielectrics fabricated by in-situ rapid thermal processing

Ultra thin (<3 nm) high quality nitride/oxide stack gate dielectrics fabricated by in-situ rapid thermal processing

In this paper, ultra thin (<3 nm) Si/sub 3/N/sub 4//SiO/sub 2/ stack layer with significant lower leakage current, superior boron diffusion barrier properties, and reliability compared with SiO/sub 2/ of identical thickness have been fabricated by in-situ RTP processing. These results demonstrate for the first time that ultra thin LPCVD Si/sub 3/N/sub 4/ can be used as gate dielectrics, contrary to those conclusions made previously on thicker LPCVD Si/sub 3/N/sub 4/.

[1] P.C. Fazan,et al. Thin nitride films on textured polysilicon to increase multimegabit DRAM cell charge capacity , 1990, IEEE Electron Device Letters.

[2] T. Morimoto,et al. An improvement of hot-carrier reliability in the stacked nitride-oxide gate n- and p-MISFET's , 1995 .

[3] G. Lo,et al. Highly reliable SiO/sub 2//Si/sub 3/N/sub 4/ stacked dielectric on rapid-thermal-nitrided rugged polysilicon for high-density DRAM's , 1992, IEEE Electron Device Letters.