Parameterization of neutron-induced SER in bulk SRAMs from reverse Monte Carlo Simulations
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[1] Arjan J. Koning,et al. Local and global nucleon optical models from 1 keV to 200 MeV , 2003 .
[2] F. Sexton,et al. Further development of the Heavy Ion Cross section for single event UPset: model (HICUP) , 1995 .
[3] C. Dyer,et al. An experimental study of single-event effects induced in commercial SRAMs by neutrons and protons from thermal energies to 500 MeV , 2004, IEEE Transactions on Nuclear Science.
[4] P. Obložinský,et al. Handbook for calculations of nuclear reaction data, RIPL-2 (Reference Input Parameter Library-2) , 2006 .
[5] J. Ziegler,et al. Effect of Cosmic Rays on Computer Memories , 1979, Science.
[6] Frédéric Wrobel,et al. Incidence of multi-particle events on soft error rates caused by n-Si nuclear reactions , 2000 .
[7] M. Calvet,et al. Contribution of SiO/sub 2/ in neutron-induced SEU in SRAMs , 2003 .
[8] J. Pontcharra,et al. SEU sensitivity of bulk and SOI technologies to 14-MeV neutrons , 2002 .
[9] Richard E. Lingenfelter,et al. Cosmic‐ray neutron demography , 1961 .
[10] Gilles Gasiot,et al. Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology node , 2003 .
[11] E. Cannon,et al. SRAM SER in 90, 130 and 180 nm bulk and SOI technologies , 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.
[12] F. Wrobel,et al. Methodology to compute neutron-Induced Alphas contribution on the SEU Cross section in sensitive RAMs , 2004, IEEE Transactions on Nuclear Science.
[13] P. Dodd,et al. Various SEU conditions in SRAM studied by 3-D device simulation , 2001 .
[14] J. Baggio,et al. Analysis of proton/neutron SEU sensitivity of commercial SRAMs-application to the terrestrial environment test method , 2004, IEEE Transactions on Nuclear Science.
[15] F. Saigne,et al. Neutron-induced SEU in bulk SRAMs in terrestrial environment: Simulations and experiments , 2004, IEEE Transactions on Nuclear Science.
[16] B. Granbom,et al. Soft error rate increase for new generations of SRAMs , 2003 .