论文信息 - Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon

Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100 mm Si substrates. A unique combination of maximum output current density exceeding 2 A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well beyond the highest reported values of any GaN-on-Si HEMTs. The current gain extrinsic cutoff frequency fT and the maximum oscillation frequency fmax were 85 and 103 GHz with 0.16-?m gate length, respectively, resulting in a high fT?Lg product that promises low-cost, high performance millimeter wave electronics.

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