Germanium/germanium-tin heterojunction phototransistors: towards high-efficient
暂无分享,去创建一个
[1] Paul Crozat,et al. Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction. , 2017, Optics express.
[2] Chengkuo Lee,et al. Infrared Black Phosphorus Phototransistor with Tunable Responsivity and Low Noise Equivalent Power. , 2017, ACS applied materials & interfaces.
[3] Y. Hao,et al. Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection , 2018, IEEE Photonics Journal.
[4] Guo-En Chang,et al. GeSn p-i-n waveguide photodetectors on silicon substrates , 2014 .
[5] John Tolle,et al. Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon , 2006 .
[6] D. Knoll,et al. High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode. , 2015, Optics express.
[7] B. Cheng,et al. Recent progress in GeSn growth and GeSn-based photonic devices , 2018, Journal of Semiconductors.
[8] H. Li,et al. Structural and optical characteristics of Ge 1−x Snx/Ge superlattices grown on Ge-buffered Si(001) wafers , 2014 .
[9] M. Takenaka,et al. Ge photodetector monolithically integrated with amorphous Si waveguide on wafer-bonded Ge-on-insulator substrate. , 2018, Optics express.
[10] Y. Yeo,et al. Above-bandgap optical properties of biaxially strained GeSn alloys grown by molecular beam epitaxy , 2014 .
[11] Y. Yeo,et al. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength , 2016 .
[12] Wei Wang,et al. Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth. , 2017, Optics express.
[13] Y. Hao,et al. Strong quantum-confined Stark effect in a lattice-matched GeSiSn/GeSn multi-quantum-well structure , 2017 .
[14] M. Berroth,et al. Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth , 2005, IEEE Photonics Technology Letters.
[15] Jurgen Michel,et al. High performance, waveguide integrated Ge photodetectors. , 2007, Optics express.
[16] V. D'costa,et al. Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands , 2009 .
[17] P. Crozat,et al. 42 GHz p.i.n Germanium photodetector integrated in a silicon-on-insulator waveguide. , 2009, Optics express.
[18] Wei Du,et al. Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection. , 2016, Optics express.