Optimization of High-Voltage Wide Bandgap Semiconductor Power Diodes
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[1] Jim Esch. Rugged Electrical Power Switching in Semiconductors: A Systems Approach , 2014, Proc. IEEE.
[2] Takashi Shinohe,et al. Parameters required to simulate electric characteristics of SiC devices for n-type 4H-SiC , 2004 .
[3] R. Stratton,et al. Field and thermionic-field emission in Schottky barriers , 1966 .
[4] Krishna Shenai,et al. Current transport mechanisms in atomically abrupt metal-semiconductor interfaces , 1988 .
[5] Chenming Hu. Optimum doping profile for minimum ohmic resistance and high-breakdown voltage , 1979, IEEE Transactions on Electron Devices.
[6] B. J. Baliga,et al. Trends in power semiconductor devices , 1996 .
[7] Chenming Hu,et al. Optimum design of power MOSFET's , 1984, IEEE Transactions on Electron Devices.
[8] M. Lenzlinger,et al. Fowler‐Nordheim Tunneling into Thermally Grown SiO2 , 1969 .
[9] V.A.K. Temple. Ideal FET doping profile , 1983, IEEE Transactions on Electron Devices.
[10] J.D. Plummer,et al. Modeling of the on-resistance of LDMOS, VDMOS, and VMOS power transistors , 1980, IEEE Transactions on Electron Devices.
[11] Krishna Shenai,et al. Novel refractory contact and interconnect metallizations for high-voltage and smart-power applications , 1990 .
[12] P. Hower,et al. Comparison of various source-gate geometries for power MOSFET's , 1981, IEEE Transactions on Electron Devices.
[13] Y. Sugawara,et al. High temperature static and dynamic characteristics of 3.7 kV high voltage 4H-SiC JBS , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
[14] K. Shenai,et al. Optimally scaled low-voltage vertical power MOSFETs for high-frequency power conversion , 1990 .
[15] Balaji Raghothamachar,et al. Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications , 2012 .
[16] E. Antončík,et al. On the theory of surface states , 1961 .
[17] Chenming Hu,et al. Optimum doping profile of power MOSFET epitaxial layer , 1982 .
[18] M.S. Adler,et al. Power semiconductor switching devices—A comparison based on inductive switching , 1982, IEEE Transactions on Electron Devices.
[19] Krishna Shenai,et al. Optimized trench MOSFET technologies for power devices , 1992 .
[20] K. Shenai,et al. Field-enhanced tunneling and barrier lowering in Al—n+GaAs—nGaAs Schottky contacts grown by MBE , 1984, IEEE Electron Device Letters.
[21] K. Ng,et al. The Physics of Semiconductor Devices , 2019, Springer Proceedings in Physics.
[22] T. Funaki,et al. Evaluation of High Frequency Switching Capability of SiC Schottky Barrier Diode, Based on Junction Capacitance Model , 2008, IEEE Transactions on Power Electronics.
[23] Krishna Shenai,et al. Optimum semiconductors for high-power electronics , 1989 .
[24] Z. Weinberg,et al. On tunneling in metal‐oxide‐silicon structures , 1982 .