论文信息 - Integrated silicon optical receiver with avalanche photodiode

Integrated silicon optical receiver with avalanche photodiode

An optical receiver consisting of an avalanche photodiode integrated with a transimpedance amplifier is reported. The optical receiver was fabricated on a 2 /spl mu/m thick SOI substrate in a 130 nm unmodified CMOS process flow. The unity gain external quantum efficiency of the photodetectors was /spl sim/10% at 850 nm. Optimum sensitivity was achieved for an avalanche gain M=8. This gain accounted for 5 dB improvement in receiver sensitivity at 2 Gbit/s. Operation at 8 Gbit/s was achieved only when the photodetector was biased in the avalanche gain regime.

J. Campbell | J. Schaub | S. Csutak | S. Wang | J. Mogab

[1] R. Mcintyre. Multiplication noise in uniform avalanche diodes , 1966 .

[2] S. D. Personick,et al. Receiver design for optical fiber communication systems , 1980 .

[3] D. Hartman,et al. A monolithic silicon photodetector/amplifier IC for fiber and integrated optics application , 1985, Journal of Lightwave Technology.

[4] J.C. Campbell,et al. A high-speed monolithic silicon photoreceiver fabricated on SOI , 2000, IEEE Photonics Technology Letters.

[5] T. K. Woodward,et al. Low-power, small-footprint gigabit Ethernet-compatible optical receiver circuit in 0.25 /spl mu/m CMOS , 2000 .

[6] H. Zimmermann,et al. A monolithically integrated 1-Gb/s optical receiver in 1-μm CMOS technology , 2001, IEEE Photonics Technology Letters.

[7] J.C. Campbell,et al. High-speed monolithically integrated silicon optical receiver fabricated in 130-nm CMOS technology , 2002, IEEE Photonics Technology Letters.