Characterization of amorphous hydrogenated carbon nitride films prepared by plasma-enhanced chemical vapor deposition using a helical resonator discharge
暂无分享,去创建一个
Hong Koo Baik | Yong Hwan Kim | H. Baik | Joo Han Kim | Y. H. Kim | Dong Hoon Ahn | D. Ahn
[1] Dejun Li,et al. Ionized magnetron sputter deposition of amorphous carbon nitride thin films , 1995 .
[2] Charles M. Lieber,et al. Experimental Realization of the Covalent Solid Carbon Nitride , 1993, Science.
[3] Synthesis of carbon-nitride films using a fast-switched dual-source low energy ion beam deposition system , 1994 .
[4] C. Lieber,et al. Diamondlike properties in a single phase carbon nitride solid , 1996 .
[5] D. Choi,et al. Structural properties of amorphous carbon nitride films prepared by remote plasma-enhanced chemical vapor deposition , 1996 .
[6] P. Martin,et al. Optical behavior of alpha‐C:N films , 1996 .
[7] D. Flamm,et al. Etching results and comparison of low pressure electron cyclotron resonance and radio frequency discharge sources , 1990 .
[8] A. Liu,et al. Prediction of New Low Compressibility Solids , 1989, Science.
[9] W. Lanford,et al. Growth of CN_xH_y films by reactive magnetron sputtering of carbon in Ar/NH_3 discharges , 1996 .
[10] Gino Mariotto,et al. AMORPHOUS NITROGENATED CARBON-FILMS - STRUCTURAL MODIFICATIONS INDUCED BY THERMAL ANNEALING , 1994 .
[11] S. R. Silva,et al. Characterization of a‐C:H:N deposition from CH4/N2 rf plasmas using optical emission spectroscopy , 1996 .
[12] J. Schwan,et al. Microstructures and mechanical properties of amorphous hydrogenated carbon-nitrogen films , 1994 .
[13] J. Tauc,et al. Amorphous and liquid semiconductors , 1974 .
[14] William Paul,et al. Optical constants of rf sputtered hydrogenated amorphous Si , 1979 .
[15] Sang M. Han,et al. Study of surface reactions during plasma enhanced chemical vapor deposition of SiO2 from SiH4, O2, and Ar plasma , 1996 .
[16] Y. Catherine,et al. Electrical characteristics and growth kinetics in discharges used for plasma deposition of amorphous carbon , 1986 .
[17] Mansour,et al. Photoelectron-spectroscopy study of amorphous a-CNx:H. , 1993, Physical review. B, Condensed matter.
[18] S. Vepřek,et al. Plasma chemical vapor deposition and properties of hard C3N4 thin films , 1995 .
[19] J. Pollard. Radio‐frequency discharge source for beams of atomic nitrogen and oxygen , 1992 .
[20] M. A. Tamor,et al. Correlation of the optical gaps and Raman spectra of hydrogenated amorphous carbon films , 1989 .
[21] J. Chubaci,et al. Properties of carbon nitride films with composition ratio C/N=0.5–3.0 prepared by the ion and vapor deposition method , 1994 .
[22] R. Nemanich,et al. First- and second-order Raman scattering from finite-size crystals of graphite , 1979 .
[23] F. Tuinstra,et al. Raman Spectrum of Graphite , 1970 .
[24] A. Bensaoula,et al. Physical properties of thin carbon nitride films deposited by electron cyclotron resonance assisted vapor deposition , 1995 .
[25] Robertson,et al. Electronic and atomic structure of amorphous carbon. , 1987, Physical review. B, Condensed matter.
[26] C. Chou,et al. Growth and characterization of carbon nitride thin films prepared by arc‐plasma jet chemical vapor deposition , 1995 .
[27] T. Yeh,et al. Durability and structure of RF sputtered carbon-nitrogen thin film overcoats on rigid disks of magnetic thin film media , 1991 .
[28] A. Lichtenberg,et al. Principles of Plasma Discharges and Materials Processing , 1994 .
[29] Rafi Kalish,et al. Properties of nitrogen‐doped amorphous hydrogenated carbon films , 1991 .
[30] Jerome J. Cuomo,et al. Reactive sputtering of carbon and carbide targets in nitrogen , 1979 .
[31] Zanatta,et al. Nitrogen in the amorphous-germanium network: From high dilution to the alloy phase. , 1993, Physical review. B, Condensed matter.