论文信息 - Metal Organic Chemical Vapor Deposition (MOCVD) Growth Of Ga1-XInxAsySb1-y : First Electrical And Optical Characterization Of Materials And Devices

Metal Organic Chemical Vapor Deposition (MOCVD) Growth Of Ga1-XInxAsySb1-y : First Electrical And Optical Characterization Of Materials And Devices

Gal-xInxAsySb1-y epitaxial layers were grown by atmospheric pressure metal organic chemical vapor deposition (MOCVD) on (100) GaSb substrates with a wide range of x and y values. Layer morphology evolution versus growth conditions is described. First results on I-V, C-V and spectral response of GaInAsSb/GaSb heterojunctions are promising for 2.5 μm photodetection.

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