Switching disturbance due to source inductance for a power MOSFET: analysis and solutions

In this paper some technological rules are given, in order to help the designer to choose correct parameter values (such as gate resistance), avoiding MOSFET switching disturbance due to common impedance coupling. The switching process is modeled, and the good understanding of switching disturbance leads to the desired technological rules, taking into account the MOSFET implementation (source inductance Ls).