Energetic deposition, measurement and simulation of graphitic contacts to 6H-SiC
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[1] E. H. Rhoderick,et al. Metal–Semiconductor Contacts , 1979 .
[2] John R. Williams,et al. The Physics of Ohmic Contacts to SiC , 1997 .
[3] Y. Lifshitz. Diamond-like carbon — present status , 1999 .
[4] J. Robertson,et al. Role of sp2 phase in field emission from nanostructured carbons , 2001 .
[5] Rectifying electrical contacts to n-type 6H–SiC formed from energetically deposited carbon , 2016 .
[6] B. Tay,et al. Abrupt stress induced transformation in amorphous carbon films with a highly conductive transition phase. , 2008, Physical review letters.
[7] Siegfried Selberherr,et al. Mixed-mode device simulation , 2000 .
[8] G. K. Reeves,et al. Graphitic Schottky Contacts to Si formed by Energetic Deposition , 2015 .
[9] B. Appleton,et al. Tuning Schottky diodes at the many-layer-graphene/ semiconductor interface by doping , 2011 .
[10] S. Davydov. On the electron affinity of silicon carbide polytypes , 2007 .
[11] Robert F. Davis,et al. A critical review of ohmic and rectifying contacts for silicon carbide , 1995 .
[12] C. Nebel. Electronic properties of CVD diamond , 2003 .
[13] R Rupp,et al. Reliability of SiC power devices and its influence on their commercialization - review, status, and remaining issues , 2010, 2010 IEEE International Reliability Physics Symposium.
[14] M. Terrones. Carbon nanotubes: synthesis and properties, electronic devices and other emerging applications , 2004 .
[15] M. N. Yoder,et al. Wide bandgap semiconductor materials and devices , 1996 .
[16] G. Amaratunga,et al. Properties of n-type tetrahedral amorphous carbon (ta-C)/p-type crystalline silicon heterojunction diodes , 1995 .
[17] B. Tay,et al. Transport of vacuum arc plasma through an off-plane double bend filtering duct , 1999 .
[18] S. Tongay,et al. Graphite based Schottky diodes formed on Si, GaAs, and 4H-SiC substrates , 2009, 0910.0615.
[19] Chia-Chi Chang,et al. Graphene-silicon Schottky diodes. , 2011, Nano letters.
[20] B. Rajasekharan,et al. How do carbon nanotubes fit into the semiconductor roadmap? , 2005 .
[21] R. F. Davis,et al. Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001) , 1995 .
[22] M. P. Anantram,et al. Physics of carbon nanotube electronic devices , 2006 .
[23] G. Amaratunga,et al. On the models used for TCAD simulations of Diamond Schottky Barrier Diodes , 2015, 2015 International Semiconductor Conference (CAS).
[24] E. Riedo,et al. sp(2)/sp(3) hybridization ratio in amorphous carbon from C 1s core-level shifts: X-ray photoelectron spectroscopy and first-principles calculation , 2001 .
[25] Stefan De Gendt,et al. Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode , 2010 .
[26] R. T. Tung. Recent advances in Schottky barrier concepts , 2001 .
[27] Z. Y. Li,et al. Influence of sp3 fraction on the field emission properties of tetrahedral amorphous carbon films formed by magnetic filtered plasma stream , 2005 .