Nano-crater formation on a Si(1 1 1)-(7 × 7) surface by slow highly charged ion-impact

[1]  Satoshi Takahashi,et al.  Dissipation of potential energy through x-ray emission in slow highly charged ion-surface collisions , 2006 .

[2]  Satoshi Takahashi,et al.  Some characteristics in the interaction of slow highly charged Iq+ ions with a Si(1 1 1) 1 × 1-H surface , 2006 .

[3]  Satoshi Takahashi,et al.  Toward over unity proton sputtering yields from a hydrogen-terminated Si(111) 1×1 surface irradiated by slow highly charged Xe ions , 2005 .

[4]  Y. Kanai,et al.  Observation of an HCI-induced nano-dot on an HOPG surface with STM and AFM , 2005 .

[5]  Satoshi Takahashi,et al.  Highly charged ion beams from the Tokyo EBIT for applications to nano-science and -technology , 2004 .

[6]  I. Gebeshuber,et al.  Nanoscopic surface modification by slow ion bombardment , 2003 .

[7]  F. Aumayr,et al.  Potential sputtering , 2003, Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences.

[8]  Toyoaki Eguchi,et al.  High resolution atomic force microscopic imaging of the Si(111)-(7 x 7) surface: contribution of short-range force to the images. , 2002, Physical review letters.

[9]  J. Gillaspy Highly charged ions , 2001 .

[10]  F. Currell,et al.  Characteristics of the beam line at the Tokyo electron beam ion trap , 2000 .

[11]  A. Hamza,et al.  Interaction of slow, very highly charged ions with surfaces , 1999 .

[12]  J. H. Weaver,et al.  Electron-Stimulated Modification of Si Surfaces , 1999 .

[13]  B. Doyle,et al.  Ablation of GaAs by Intense, Ultrafast Electronic Excitation from Highly Charged Ions , 1998 .

[14]  K. Tanimura,et al.  LASER-INDUCED ELECTRONIC BOND BREAKING AND DESORPTION OF ADATOMS ON SI(111)-(7 X 7) , 1998 .

[15]  B. Doyle,et al.  Synergy of Electronic Excitations and Elastic Collision Spikes in Sputtering of Heavy Metal Oxides , 1998 .

[16]  A. Hamza,et al.  Cluster ion emission in the interaction of slow highly charged ions with surfaces , 1998 .

[17]  R. Schmieder,et al.  Non-kinetic damage on insulating materials by highly charged ion bombardment , 1998 .

[18]  J. Gillaspy,et al.  Surface Coulomb explosions: The influence of initial charge distributions , 1998 .

[19]  T. Fukami,et al.  Characteristics of the Tokyo Electron-Beam Ion Trap , 1997 .

[20]  T. Seguchi,et al.  Scanning tunneling microscopy and atomic force microscopy study of graphite defects produced by bombarding with highly charged ions , 1997 .

[21]  J. Gillaspy,et al.  Nanoscale modification of silicon surfaces via Coulomb explosion , 1997 .

[22]  F. Aumayr,et al.  Sputter yields of insulators bombarded with hyperthermal multiply charged ions , 1997 .

[23]  A. Arnau,et al.  Interaction of slow multicharged ions with solid surfaces , 1997 .

[24]  Y. Yamamura,et al.  ENERGY DEPENDENCE OF ION-INDUCED SPUTTERING YIELDS FROM MONATOMIC SOLIDS AT NORMAL INCIDENCE , 1996 .

[25]  Winter,et al.  Emission of electrons from a clean gold surface induced by slow, very highly charged ions at the image charge acceleration limit. , 1993, Physical review letters.

[26]  É. Parilis Atomic Collisions on Solid Surfaces , 1993 .

[27]  Zandvliet,et al.  Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfaces. , 1992, Physical review. B, Condensed matter.

[28]  J. Boland The importance of structure and bonding in semiconductor surface chemistry: hydrogen on the Si(111)-7 × 7 surface , 1991 .

[29]  Masaetsu Takahashi,et al.  Structure analysis of si(111)-7×7 reconstructed surface by transmission electron diffraction , 1985 .