Nano-crater formation on a Si(1 1 1)-(7 × 7) surface by slow highly charged ion-impact
暂无分享,去创建一个
Satoshi Takahashi | S. Mashiko | M. Sakurai | S. Ohtani | C. Yamada | M. Tona | N. Nakamura | H. Watanabe | T. Terui | Nobuo Yoshiyasu
[1] Satoshi Takahashi,et al. Dissipation of potential energy through x-ray emission in slow highly charged ion-surface collisions , 2006 .
[2] Satoshi Takahashi,et al. Some characteristics in the interaction of slow highly charged Iq+ ions with a Si(1 1 1) 1 × 1-H surface , 2006 .
[3] Satoshi Takahashi,et al. Toward over unity proton sputtering yields from a hydrogen-terminated Si(111) 1×1 surface irradiated by slow highly charged Xe ions , 2005 .
[4] Y. Kanai,et al. Observation of an HCI-induced nano-dot on an HOPG surface with STM and AFM , 2005 .
[5] Satoshi Takahashi,et al. Highly charged ion beams from the Tokyo EBIT for applications to nano-science and -technology , 2004 .
[6] I. Gebeshuber,et al. Nanoscopic surface modification by slow ion bombardment , 2003 .
[7] F. Aumayr,et al. Potential sputtering , 2003, Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences.
[8] Toyoaki Eguchi,et al. High resolution atomic force microscopic imaging of the Si(111)-(7 x 7) surface: contribution of short-range force to the images. , 2002, Physical review letters.
[9] J. Gillaspy. Highly charged ions , 2001 .
[10] F. Currell,et al. Characteristics of the beam line at the Tokyo electron beam ion trap , 2000 .
[11] A. Hamza,et al. Interaction of slow, very highly charged ions with surfaces , 1999 .
[12] J. H. Weaver,et al. Electron-Stimulated Modification of Si Surfaces , 1999 .
[13] B. Doyle,et al. Ablation of GaAs by Intense, Ultrafast Electronic Excitation from Highly Charged Ions , 1998 .
[14] K. Tanimura,et al. LASER-INDUCED ELECTRONIC BOND BREAKING AND DESORPTION OF ADATOMS ON SI(111)-(7 X 7) , 1998 .
[15] B. Doyle,et al. Synergy of Electronic Excitations and Elastic Collision Spikes in Sputtering of Heavy Metal Oxides , 1998 .
[16] A. Hamza,et al. Cluster ion emission in the interaction of slow highly charged ions with surfaces , 1998 .
[17] R. Schmieder,et al. Non-kinetic damage on insulating materials by highly charged ion bombardment , 1998 .
[18] J. Gillaspy,et al. Surface Coulomb explosions: The influence of initial charge distributions , 1998 .
[19] T. Fukami,et al. Characteristics of the Tokyo Electron-Beam Ion Trap , 1997 .
[20] T. Seguchi,et al. Scanning tunneling microscopy and atomic force microscopy study of graphite defects produced by bombarding with highly charged ions , 1997 .
[21] J. Gillaspy,et al. Nanoscale modification of silicon surfaces via Coulomb explosion , 1997 .
[22] F. Aumayr,et al. Sputter yields of insulators bombarded with hyperthermal multiply charged ions , 1997 .
[23] A. Arnau,et al. Interaction of slow multicharged ions with solid surfaces , 1997 .
[24] Y. Yamamura,et al. ENERGY DEPENDENCE OF ION-INDUCED SPUTTERING YIELDS FROM MONATOMIC SOLIDS AT NORMAL INCIDENCE , 1996 .
[25] Winter,et al. Emission of electrons from a clean gold surface induced by slow, very highly charged ions at the image charge acceleration limit. , 1993, Physical review letters.
[26] É. Parilis. Atomic Collisions on Solid Surfaces , 1993 .
[27] Zandvliet,et al. Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfaces. , 1992, Physical review. B, Condensed matter.
[28] J. Boland. The importance of structure and bonding in semiconductor surface chemistry: hydrogen on the Si(111)-7 × 7 surface , 1991 .
[29] Masaetsu Takahashi,et al. Structure analysis of si(111)-7×7 reconstructed surface by transmission electron diffraction , 1985 .