论文信息 - Electrical transport and trap properties in nitrogen-doped p-type MBE-grown ZnSe layers on GaAs using different contact materials - 字舞流文

Electrical transport and trap properties in nitrogen-doped p-type MBE-grown ZnSe layers on GaAs using different contact materials

D. Zahn | D. Hommel | M. Behringer | M. Fehrer | E. Thomas | R. Beyer | H. Burghardt | G. Prösch