论文信息 - Infrared absorption of hydrogenated amorphous SiC and GeC films

Infrared absorption of hydrogenated amorphous SiC and GeC films

Abstract We have observed and assigned the main IR absorption bands of Si x C 1− x H z and Ge x C 1− x H z films produced with an r.f. glow discharge. The influence of neighbouring atoms on the frequency of SiH and CH bond stretching vibrations was determined. Agreement between observed and calculated frequency shifts was obtained for Si x C 1− x H z films.

G. Turban | Guy Turban | Y. Catherine | Y. Catherine

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