Schottky type photodiodes as detectors in the VUV and soft x-ray range.
暂无分享,去创建一个
Franz Schäfers | Michael Krumrey | Michael Krisch | E. Tegeler | Jochen Barth | M. Krumrey | F. Schäfers | M. Krisch | J. Barth | E. Tegeler | R. Wolf | Reinhard Wolf | J. Barth | M Krisch | R. Wolf
[1] B Wende,et al. Spectral radiant power measurements of VUV and soft x-ray sources using the electron storage ring BESSY as a radiometric standard source. , 1984, Applied optics.
[2] B. L. Henke,et al. The characterization of x‐ray photocathodes in the 0.1–10‐keV photon energy region , 1981 .
[3] C. W. Struck,et al. Scattering by ionization and phonon emission in semiconductors , 1980 .
[4] W. Veigele,et al. Photon cross sections from 0.1 keV to 1 MeV for elements Z = 1 to Z = 94* , 1973 .
[5] J. Samson,et al. Average energy loss per ion pair formation by photon and electron impact on xenon between threshold and 90 eV. , 1976, Radiation research.
[6] D. B. Brown,et al. Defect Production in SiO2 by X-Ray and Co-60 Radiations , 1985, IEEE Transactions on Nuclear Science.
[7] D M Corallo,et al. The X-ray calibration of silicon p-i-n diodes between 1.5 and 17.4 keV , 1980 .
[8] T. J. Tanaka,et al. Low-energy x-ray interaction coefficients: Photoabsorption, scattering, and reflection: E = 100–2000 eV Z = 1–94☆ , 1982 .
[9] Werner Jark,et al. Output diagnostics of the grazing incidence plane grating monochromator bumble bee (15–1500 eV)☆ , 1986 .
[10] M. I. Bell,et al. Silicon photodiode detector for fluorescence EXAFS , 1987 .
[11] T. Jach,et al. PIN diodes as detectors in the energy region 500 eV–10 keV , 1983 .
[12] B Wende,et al. Electron storage ring BESSY as a radiometric source of calculable spectral radiant power between 0.5 and 1000 nm. , 1985, Optics letters.
[13] Eiji Sakai,et al. Present status of room temperature semiconductor detectors , 1982 .
[14] J. Fischer,et al. Radiative transfer in an atmosphere-ocean system: an azimuthally dependent matrix-operator approach. , 1984, Applied optics.
[15] J Geist. Photodiode operating mode nomenclature. , 1986, Applied optics.
[16] J. West,et al. Absolute photoionization cross-section tables for xenon in the VUV and the soft x-ray regions , 1978 .
[17] T. Kobayashi. Average energy to form electron‐hole pairs in GaP diodes with alpha particles , 1972 .
[18] E. B. Saloman,et al. X-ray diodes for laser fusion plasma diagnostics , 1981 .
[19] J. Geist,et al. Quantum efficiency stability of silicon photodiodes. , 1987, Applied optics.
[20] M. Krisch,et al. Characteristics And Applications Of Semiconductor Photodiodes From The Visible To The X-Ray Region , 1986, Other Conferences.
[21] J. West,et al. Absolute photoionization cross-section tables for helium, neon, argon, and krypton in the VUV spectral regions , 1976 .