Schottky type photodiodes as detectors in the VUV and soft x-ray range.

The quantum efficiencies of semiconductor photodiodes have been measured at photon energies from 5 to 3500 eV. For silicon photodiodes strong radiation-induced effects were found. GaAsP and GaP Schottky diodes show remarkable stability and high quantum efficiency. Use of Schottky diodes for spectroscopic and radiometric measurements is discussed.

[1]  B Wende,et al.  Spectral radiant power measurements of VUV and soft x-ray sources using the electron storage ring BESSY as a radiometric standard source. , 1984, Applied optics.

[2]  B. L. Henke,et al.  The characterization of x‐ray photocathodes in the 0.1–10‐keV photon energy region , 1981 .

[3]  C. W. Struck,et al.  Scattering by ionization and phonon emission in semiconductors , 1980 .

[4]  W. Veigele,et al.  Photon cross sections from 0.1 keV to 1 MeV for elements Z = 1 to Z = 94* , 1973 .

[5]  J. Samson,et al.  Average energy loss per ion pair formation by photon and electron impact on xenon between threshold and 90 eV. , 1976, Radiation research.

[6]  D. B. Brown,et al.  Defect Production in SiO2 by X-Ray and Co-60 Radiations , 1985, IEEE Transactions on Nuclear Science.

[7]  D M Corallo,et al.  The X-ray calibration of silicon p-i-n diodes between 1.5 and 17.4 keV , 1980 .

[8]  T. J. Tanaka,et al.  Low-energy x-ray interaction coefficients: Photoabsorption, scattering, and reflection: E = 100–2000 eV Z = 1–94☆ , 1982 .

[9]  Werner Jark,et al.  Output diagnostics of the grazing incidence plane grating monochromator bumble bee (15–1500 eV)☆ , 1986 .

[10]  M. I. Bell,et al.  Silicon photodiode detector for fluorescence EXAFS , 1987 .

[11]  T. Jach,et al.  PIN diodes as detectors in the energy region 500 eV–10 keV , 1983 .

[12]  B Wende,et al.  Electron storage ring BESSY as a radiometric source of calculable spectral radiant power between 0.5 and 1000 nm. , 1985, Optics letters.

[13]  Eiji Sakai,et al.  Present status of room temperature semiconductor detectors , 1982 .

[14]  J. Fischer,et al.  Radiative transfer in an atmosphere-ocean system: an azimuthally dependent matrix-operator approach. , 1984, Applied optics.

[15]  J Geist Photodiode operating mode nomenclature. , 1986, Applied optics.

[16]  J. West,et al.  Absolute photoionization cross-section tables for xenon in the VUV and the soft x-ray regions , 1978 .

[17]  T. Kobayashi Average energy to form electron‐hole pairs in GaP diodes with alpha particles , 1972 .

[18]  E. B. Saloman,et al.  X-ray diodes for laser fusion plasma diagnostics , 1981 .

[19]  J. Geist,et al.  Quantum efficiency stability of silicon photodiodes. , 1987, Applied optics.

[20]  M. Krisch,et al.  Characteristics And Applications Of Semiconductor Photodiodes From The Visible To The X-Ray Region , 1986, Other Conferences.

[21]  J. West,et al.  Absolute photoionization cross-section tables for helium, neon, argon, and krypton in the VUV spectral regions , 1976 .