N2 doped SiO2–SiON planar waveguides deposited by PECVD method
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D. Yoon | Sungkoo Cho | H. Lee | Youn-Jea Kim | H. Yoon
[1] Do‐Heyoung Kim,et al. Effects of process parameters on the growth of thick SiO2 using plasma enhanced chemical vapor deposition with hexamethyldisilazane , 2000 .
[2] Z. Ren,et al. Planar optical waveguide thin films grown by microwave ECR PECVD , 2000 .
[3] Qiming Wang,et al. The fabrication of thick SiO2 layer by anodization , 2000 .
[4] R. Mertens,et al. Influence of hydrogen on losses in silicon oxynitride planar optical waveguides , 2000 .
[5] O. Leistiko,et al. Plasma‐Enhanced Chemical Vapor Deposited Silicon Oxynitride Films for Optical Waveguide Bridges for Use in Mechanical Sensors , 1997 .
[6] Naoki Wakamiya,et al. Performance evaluation of burst‐based bandwidth‐reservation method in ATM networks , 1994 .
[7] Donald L. Smith,et al. Chemistry of SiO2 Plasma Deposition , 1993 .
[8] C. Henry,et al. Low loss Si(3)N(4)-SiO(2) optical waveguides on Si. , 1987, Applied optics.
[9] David E. Zelmon,et al. Low loss optical waveguides fabricated by thermal nitridation of oxidized silicon , 1985 .