Low scratch high throughput auto stop slurry

CMP (chemical mechanical planarization) applications on both DRAM and 3D NAND have gained a lot of attentions. As one of the most important processes for high step height pattern, CMP has challenges to meet all the requirements. For high step height pattern CMP, high removal rate is required when high step height is necessary while low removal rate is required when step height is low. Meanwhile the defect is also critical. In other words, the CMP process is required to have high removal rate and good planarization efficiency (PE) with good trench protection and good defectivity performance. Here we will introduce a slurry with great self-stop features necessary for high step height DRAM and 3D NAND applications. The slurry is proven to meet high step height reduction rate, good trench protection and great throughput.