A high frequency 0.35 /spl mu/m gate length power silicon NMOSFET operating with breakdown voltage of 13 V
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Hiroshi Iwai | Tatsuya Ohguro | Hisayo Sasaki Momose | Takashi Yoshitomi | M. Saito | Mizuki Ono | Koichi Endo | M. Kakumoto
[1] Kenji Sekine,et al. A 1.5 GHz, 35-W Si-MOSFET with an internal matching circuit , 1994, Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.