A high frequency 0.35 /spl mu/m gate length power silicon NMOSFET operating with breakdown voltage of 13 V

High frequency silicon power n-MOSFETs with 0.35 /spl mu/m gate length were fabricated. The symmetrical LDD structure was adopted for its source and drain junctions. Record high fT, 8.3 GHz, and fmax, 6.0 GHz, were obtained at 3.5 V supply voltage. High breakdown voltage of 13 V was achieved concurrently due to the optimizations of the process and devices parameters. The efficiency of output power for the 900 M/spl sim/2.0 GHz operation was also discussed.