Simulation analysis of the bipolar amplification in fully-depleted SOI technologies under heavy-ion irradiations

The sensitivity to heavy ions of a 0.25 /spl mu/m fully-depleted SOI n-channel transistor is evaluated by numerical simulation. The variation of the bipolar gain versus LET and particle location in the structure is thoroughly investigated.

[1]  Claude Marcandella,et al.  Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation , 2002 .

[3]  O. Faynot,et al.  Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose-rate irradiations , 2002 .

[4]  B. Giffard,et al.  CMOS/SOI hardening at 100 Mrad (SiO/sub 2/) , 1990 .

[5]  Lloyd W. Massengill,et al.  Analysis of the influence of MOS device geometry on predicted SEU cross sections , 1999 .

[6]  O. Flament,et al.  Study of transient current induced by heavy-ion in NMOS/SOI transistors , 2002 .

[7]  G. G. Shahidi.  SOI technology for the GHz era , 2002, IBM J. Res. Dev..

[8]  D. S. Walsh,et al.  Single-event upset and snapback in silicon-on-insulator devices and integrated circuits , 2000 .

[9]  D. S. Walsh,et al.  SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments , 2001 .

[10]  Philippe Roche,et al.  Comparison of the sensitivity to heavy ions of 0.25-/spl mu/m bulk and SOI technologies , 2002 .

[11]  O. Faynot,et al.  SOI technology performance and modelling , 1999, 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).

[12]  Guillaume Hubert,et al.  Study of basic mechanisms induced by an ionizing particle on simple structures , 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).

[13]  T. Tsuchiya,et al.  Three mechanisms determining short-channel effects in fully-depleted SOI MOSFETs , 1998 .

[14]  C. T. Nguyen,et al.  Parasitic bipolar gain in fully depleted n-channel SOI MOSFET's , 1994 .

[16]  B. Giffard,et al.  SEU in SOI SRAMs-a static model , 1994 .

[17]  D. S. Walsh,et al.  Charge collection in SOI capacitors and circuits and its effect on SEU hardness , 2002 .