Heterojunction-based GaSb/InAs strained-layer superlattice long wavelength infrared detectors

[1]  Sumith V. Bandara,et al.  Doping dependence of minority carrier lifetime in long-wave Sb-based type II superlattice infrared detector materials , 2011 .

[2]  David Z. Ting,et al.  Characterization of barrier effects in superlattice LWIR detectors , 2010, Defense + Commercial Sensing.

[3]  W. E. Tennant,et al.  “Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance? , 2010 .

[4]  D. Ting,et al.  A high-performance long wavelength superlattice complementary barrier infrared detector , 2009 .

[5]  R. DeWames,et al.  Minority carrier lifetime characteristics in type II InAs/GaSb LWIR superlattice n+πp+ photodiodes , 2009, Defense + Commercial Sensing.

[6]  Manijeh Razeghi,et al.  Background limited performance of long-wavelength infrared focal plane arrays fabricated from Type-II InAs/GaSb M-structure superlattice , 2009, Defense + Commercial Sensing.

[7]  Manijeh Razeghi,et al.  Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K , 2008 .

[8]  Alexander Soibel,et al.  Infrared imaging arrays based on superlattice photodiodes , 2008, SPIE Defense + Commercial Sensing.

[9]  Chadwick L. Canedy,et al.  Recent progress in W-structured type-II superlattice photodiodes , 2007, SPIE OPTO.

[10]  Martin Walther,et al.  High performance InAs/Ga1-xInxSb superlattice infrared photodiodes , 1997 .

[11]  H. Ehrenreich,et al.  Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes , 1995 .