A planar InGaAs PIN/JFET fiber-optic detector
暂无分享,去创建一个
H. Serizawa | T. Uno | K. Inoue | H. Serizawa | T. Uno | K. Inoue | K. Ohnaka | K. Ohnaka | K. Hasegawa | N. Hase | K. Hasegawa | N. Hase
[1] U. Koren,et al. Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP , 1982 .
[2] D. Aspnes,et al. Surface chemical reactions on In0.53Ga0.47As , 1983 .
[3] T. H. Windhorn,et al. The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 K , 1982, IEEE Electron Device Letters.
[4] R. Zuleeg,et al. Voltage-current characteristics of GaAs J-FET's in the hot electron range☆ , 1970 .
[5] Kam Y. Lau,et al. Very high frequency GaAlAs laser field‐effect transistor monolithic integrated circuit , 1982 .
[6] T. Pearsall,et al. The thermal‐expansion parameters of some GaxIn1−xAsyP1−x alloys , 1979 .
[7] R. Leheny,et al. Characterization of In0.53Ga0.47As photodiodes exhibiting low dark current and low junction capacitance , 1981, IEEE Journal of Quantum Electronics.
[8] I. Camlibel,et al. Low dark-current, high-efficiency planar In0.53Ga0.47As/InP P-I-N photodiodes , 1981, IEEE Electron Device Letters.
[9] R. Yeats,et al. Polyimide passivation of In0.53Ga0.47As, InP, and InGaAsP/InP p‐n junction structures , 1984 .
[10] M. Ito,et al. A monolithically integrated AlGaAs/GaAs p-i-n/FET Photoreceiver by MOCVD , 1983, IEEE Electron Device Letters.
[11] T. Miya,et al. Ultimate low-loss single-mode fibre at 1.55 μm , 1979 .
[12] K. Kasahara,et al. Integrated PINFET optical receiver with high-frequency InP-MISFET , 1983 .
[13] R. E. Nahory,et al. Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver , 1980 .