论文信息 - A DC-60 GHz GaAs MMIC switch using novel distributed FET

A DC-60 GHz GaAs MMIC switch using novel distributed FET

This paper presents the broadest-band distributed FET MMIC switch ever reported for millimeter-wave applications. The developed switch with the novel structure indicated an insertion loss of less than 1.37 dB and an isolation of better than 23.1 dB with monotonous increase up to 39.6 dB from DC to 60 GHz.

Y. Takayama | H. Mizutani

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