Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices

An intentionally introduced interface layer in the resistive random-access memory (RRAM) devices play an important role in the improvement of resistive switching characteristics. In this paper, the resistive switching characteristics of ZrO<sub>2</sub>-based RRAM devices by inserting a thin TiO<sub>2</sub> interface layer between electrodes and ZrO<sub>2</sub> resistive switching layer were investigated. Compared with the Cu/ZrO<sub>2</sub>/Pt and Cu/ZrO<sub>2</sub>/TiO<sub>2</sub>/Pt devices, the Cu/TiO<sub>2</sub>/ZrO<sub>2</sub>/Pt and Cu/TiO<sub>2</sub>/ZrO<sub>2</sub>/TiO<sub>2</sub>/Pt devices showed much improved programing voltages, including lower forming voltage and lower set voltage. Moreover, the reset current was also improved. These results indicate that the TiO<sub>2</sub> interface layer between the anode electrode and the resistive switching layer plays an important role in improving device performance.

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