Mass spectrometric studies of phosphine pyrolysis and OMVPE growth of InP

Abstract The mechanism of PH 3 decomposition was studied by using D 2 as a carrier gas and analyzing the reaction products with a mass spectrometer. The effects of InP and silica surfaces were investigated. The only gaseous product below 600°C is H 2 . Since any gas phase H atoms would produce HD, the reaction occurs entirely on the surface. The slow step is the unimolecular removal of the first hydrogen atom, with an activation energy of 36.0 kcal/mole on InP surfaces. The reaction on InP is first order for PH 3 concentrations as high as 15%, so the surface is not saturated at those conditions. When trimethylindium (TMIn) is added to the gas mixture, the mechanism changes dramatically, probably proceeding via an unstable intermediate adduct of TMIn and PH 3 which eliminates CH 4 upon formation. This concerted reaction lowers the pyrolysis temperatures of both PH 3 and TMIn.

[1]  M. Yoshida,et al.  Mass Spectrometric Study of Ga ( CH 3 ) 3 and Ga ( C 2 H 5 ) 3 Decomposition Reaction in H 2 and N 2 , 1985 .

[2]  C. Hinshelwood,et al.  XLVII.—The unimolecular decomposition of phosphine , 1924 .

[3]  M. Umeno,et al.  MOCVD growth of GaAs0.6P0.4 on Si substrate , 1986 .

[4]  H. Lüth,et al.  Ultraviolet induced metal‐organic chemical vapor deposition growth of GaAs , 1986 .

[5]  G. Lapeyre,et al.  Surface studies of GaAs(111) and GaAs(1̄1̄1̄) using high‐resolution electron energy loss spectroscopy, x‐ray photoelectron spectroscopy, and low‐energy electron diffraction , 1985 .

[6]  U. Koren,et al.  High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy , 1986 .

[7]  C. A. Larsen,et al.  MOVPE growth of GaInAsSb , 1986 .

[8]  Ming L. Yu,et al.  Doping reaction of PH3 and B2H6 with Si(100) , 1986 .

[9]  G. B. Stringfellow,et al.  Organometallic growth and characterization of GaxIn1−xP (x=0.51, 0.65, 0.69) , 1986 .

[10]  Markus Pessa,et al.  atomic layer epitaxy , 1986, Catalysis from A to Z.

[11]  G. Constant,et al.  Croissance épitaxique de GaAs1−xPx (0 < x < 0.6) par OM-CVD á partir du complexe CIEt2Ga·AsEt3 et de la diethyl phosphine: une source de phosphore originale HPEt2 , 1983 .

[12]  J. S. Evans,et al.  A new approach to MOCVD of indium phosphide and gallium-indium arsenide , 1981 .

[13]  J. Nishizawa,et al.  On the Reaction Mechanism of GaAs MOCVD , 1983 .

[14]  R. M. Biefeld.  The use of metalorganic chemical vapor deposition to prepare device quality Ga(AsP) strained-layer superlattices , 1986 .

[15]  G. B. Stringfellow,et al.  Decomposition kinetics of OMVPE precursors , 1986 .

[16]  J. Ballantyne,et al.  Very high mobility InP grown by low pressure metalorganic vapor phase epitaxy using solid trimethylindium source , 1985 .