Electric field dependence of the binding energy of shallow donors in GaAs-Ga1-xAlxAs quantum wells.

We report theoretical results on the electric field dependence of the impurity binding energy in quantum-well structures. The field is assumed to be constant and applied parallel to the growth axis. Several impurity positions are considered. As a result of the field-induced electronic polarization, the impurity binding energy may be decreased or increased depending on the impurity location in the quantum well.