论文信息 - Thermal stability of emitter ballasted HBT's

Thermal stability of emitter ballasted HBT's

A simple analytical model is derived for thermoelectronic stability in heterojunction bipolar transistors (HBT's). An expression is presented for the value of emitter ballast resistor needed to stabilize the transistor. The result leads to a stability diagram on the current-voltage (I-V) plane which aids in the selection of emitter ballast resistors.

M. G. Adlerstein

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