Temperature Dependence of Hysteresis Effect in Partially Depleted Silicon-on-Insulator MOSFETs

The hysteresis effect on the output characteristics, which originates from the floating-body effect, has been measured in partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, at different temperatures between 25 °C and 125 °C. For a better understanding of the hysteresis characteristics, the authors developed ID hysteresis which is defined as the difference between ID versus VD forward sweep and reverse sweep. The fabricated devices show positive and negative peaks in Id hysteresis. The experimental results show that ID hysteresis declined as the operating temperature increases. Based on the measurement, we have demonstrated the temperature dependence of hysteresis effect in PD SOI MOSFETs.

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