Structural, optical, and electrical properties of (Zn,Al)O films over a wide range of compositions

(Zn,Al)O thin films have been prepared by a dc reactive magnetron sputtering system with the Al contents in a wide range of 0–50at.%. The structural, optical, and electrical properties of (Zn,Al)O films were detailedly and systematically studied. The amount of Al in the film was nearly the same as, but often lower than, that in the sputtering target. The growth rate of films monotonically decreased as the Al content increased. In a low Al content region (<10at.%), Al-doped ZnO (AZO) thin films could be obtained at 400°C in an Ar–O2 ambient with good properties. The optimal results of n-type AZO films were obtained at an Al content of 4at.%, with low resistivity ∼10−4Ωcm, high transmittance ∼90% in the visible region, and acceptable crystal quality with a high c-axis orientation. The band gap could be widened to 3.52eV at 4at.% Al due to the Burstein-Moss shift [E. Burstein, Phys. Rev. 93, 632 (1954)] modulated by many-body effects. An appropriate Al-doping concentration served effectively to release the r...

[1]  F. Zhuge,et al.  p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions , 2005 .

[2]  F. Zhuge,et al.  ZnO p-n homojunctions and ohmic contacts to Al-N-co-doped p-type ZnO , 2005 .

[3]  Mitsuaki Yano,et al.  Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented si substrate toward UV-detector applications , 2005 .

[4]  Y. Liu,et al.  F-doping effects on electrical and optical properties of ZnO nanocrystalline films , 2005 .

[5]  J. F. Cordaro,et al.  Optical Properties of Zinc Aluminate, Zinc Gallate, and Zinc Aluminogallate Spinels , 2005 .

[6]  F. Zhuge,et al.  p-type conduction in N–Al co-doped ZnO thin films , 2004 .

[7]  Jow-Lay Huang,et al.  The properties of heavily Al-doped ZnO films before and after annealing in the different atmosphere , 2004 .

[8]  Li-ping Zhu,et al.  Gold schottky contacts on n-type ZnO thin films with an Al/Si(1 0 0) substrates , 2004 .

[9]  Scott A. Barnett,et al.  Transparent conducting Zn1−xMgxO:(Al,In) thin films , 2004 .

[10]  A. Ohtomo,et al.  Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO:Ga , 2004, cond-mat/0406211.

[11]  T. Seong,et al.  Mechanism of Nonalloyed Al Ohmic Contacts to n-Type ZnO:Al Epitaxial Layer , 2004 .

[12]  David C. Look,et al.  P‐type doping and devices based on ZnO , 2004 .

[13]  M. Wuttig,et al.  Efforts to improve carrier mobility in radio frequency sputtered aluminum doped zinc oxide films , 2004 .

[14]  Ichiro Takeuchi,et al.  Monolithic multichannel ultraviolet detector arrays and continuous phase evolution in MgxZn1−xO composition spreads , 2003 .

[15]  Pijush Bhattacharya,et al.  Effect of high substrate temperature on Al-doped ZnO thin films grown by pulsed laser deposition , 2003 .

[16]  Seong Jun Park,et al.  Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer , 2003 .

[17]  X. M. Li,et al.  Doping of the nanocrystalline semiconductor zinc oxide with the donor indium , 2003 .

[18]  Junhui He,et al.  Structural and photoluminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates , 2003 .

[19]  Z. Ye,et al.  p-type ZnO films deposited by DC reactive magnetron sputtering at different ammonia concentrations , 2003 .

[20]  Makoto Ishida,et al.  Epitaxial growth of high quality ZnO:Al film on silicon with a thin γ-Al2O3 buffer layer , 2003 .

[21]  Dejie Li,et al.  Fabrication and vacuum annealing of transparent conductive AZO thin films prepared by DC magnetron sputtering , 2002 .

[22]  Hyung Kook Kim,et al.  Solid solubility limits of Ga and Al in ZnO , 2002 .

[23]  Ye Zhizhen,et al.  Preparation and Properties of N-Doped p-Type ZnO Films by Solid-Source Chemical Vapour Deposition with the c-Axis Parallel to the Substrate , 2002 .

[24]  A. Aberle,et al.  Optimisation of ZnO:Al films by change of sputter gas pressure for solar cell application , 2002 .

[25]  F. Yubero,et al.  Preparation of transparent and conductive Al-doped ZnO thin films by ECR plasma enhanced CVD , 2002 .

[26]  Gang Xiong,et al.  Control of p- and n-type conductivity in sputter deposition of undoped ZnO , 2002 .

[27]  H. Koinuma,et al.  Optical Properties of ZnO:Al Epilayers and of Undoped Epilayers Capped by Wider‐Gap MgZnO Grown by Laser MBE , 2002 .

[28]  E. Fortunato,et al.  Effect of different dopant elements on the properties of ZnO thin films , 2002 .

[29]  Rong Huang,et al.  Optical and electrical properties of direct-current magnetron sputtered ZnO:Al films , 2001 .

[30]  Zakya H. Kafafi,et al.  Indium tin oxide thin films grown on flexible plastic substrates by pulsed-laser deposition for organic light-emitting diodes , 2001 .

[31]  Akira Ohtomo,et al.  Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films , 2001 .

[32]  P. Patil,et al.  Studies on structural, optical and electrical properties of boron doped zinc oxide films prepared by spray pyrolysis technique , 2001 .

[33]  David C. Look,et al.  Ga-Doped ZnO Films Grown on GaN Templates by Plasma-Assisted Molecular-Beam Epitaxy , 2000 .

[34]  A. Gilmore,et al.  Direct measurement of density-of-states effective mass and scattering parameter in transparent conducting oxides using second-order transport phenomena , 2000 .

[35]  M. Miki-Yoshida,et al.  Structure and morphology of high quality indium-doped ZnO films obtained by spray pyrolysis , 2000 .

[36]  Y. Ryu,et al.  Fabrication of homostructural ZnO p-n junctions , 2000 .

[37]  Xianghuai Liu,et al.  Intrinsic limit of electrical properties of transparent conductive oxide films , 2000 .

[38]  David S. Ginley,et al.  Transparent Conducting Oxides , 2000 .

[39]  T. Miyata,et al.  Highly transparent and conductive rare earth-doped ZnO thin films prepared by magnetron sputtering , 2000 .

[40]  X Wang,et al.  X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films , 2000 .

[41]  C. Gorla,et al.  Structure and interface-controlled growth kinetics of ZnAl2O4 formed at the (112̄0) ZnO/(011̄2) Al2O3 interface , 2000 .

[42]  S. Studenikin,et al.  Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films , 2000 .

[43]  Alberto Piqué,et al.  Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices , 2000 .

[44]  Zhang De-heng,et al.  Optical and electronic properties of transparent conducting ZnO and ZnO:Al films prepared by evaporating method , 1999 .

[45]  R. Triboulet,et al.  ZnO growth by chemical vapour transport , 1999 .

[46]  K. Kusaka,et al.  Abnormal residual stress state in ZnO films synthesized by planar magnetron sputtering system with two facing targets , 1999 .

[47]  B. Ataev,et al.  Highly conductive and transparent thin ZnO films prepared in situ in a low pressure system , 1999 .

[48]  E. Fortunato,et al.  Influence of the doping and annealing atmosphere on zinc oxide thin films deposited by spray pyrolysis , 1999 .

[49]  A. Jiménez-González,et al.  Optical and electrical characteristics of aluminum-doped ZnO thin films prepared by solgel technique , 1998 .

[50]  Masashi Kawasaki,et al.  Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films , 1998 .

[51]  R. Cebulla,et al.  Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties , 1998 .

[52]  Akira Ohtomo,et al.  MgxZn1−xO as a II–VI widegap semiconductor alloy , 1998 .

[53]  D. C. Reynolds,et al.  Electrical properties of bulk ZnO , 1998 .

[54]  R. Wendt,et al.  D.c. and r.f. (reactive) magnetron sputtering of ZnO:Al films from metallic and ceramic targets: a comparative study , 1997 .

[55]  Kun Ho Kim,et al.  Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering , 1997 .

[56]  Vinay Gupta,et al.  Influence of postdeposition annealing on the structural and optical properties of sputtered zinc oxide film , 1996 .

[57]  A. Sleight,et al.  Highly conducting transparent thin films based on zinc oxide , 1996 .

[58]  T. B. Ghosh,et al.  XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films , 1996 .

[59]  L. C. Jonghe,et al.  Reaction Sintering of ZnO‐AI2O3 , 1995 .

[60]  K. Ellmer,et al.  Influence of discharge parameters on the layer properties of reactive magnetron sputtered ZnO:Al films , 1994 .

[61]  Jacobson,et al.  Growth morphology and the equilibrium shape: The role of "surfactants" in Ge/Si island formation. , 1993, Physical review letters.

[62]  Grandjean,et al.  Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers. , 1992, Physical review letters.

[63]  W. W. Wenas,et al.  Electrical and optical properties of boron‐doped ZnO thin films for solar cells grown by metalorganic chemical vapor deposition , 1991 .

[64]  S. Chaudhuri,et al.  Grain boundary scattering in aluminium-doped ZnO films , 1991 .

[65]  Yasuhiro Igasaki,et al.  The effects of deposition rate on the structural and electrical properties of ZnO:Al films deposited on (112̄0) oriented sapphire substrates , 1991 .

[66]  K. Yoon,et al.  Optical and electrical properties of Ga2O3-doped ZnO films prepared by r.f. sputtering , 1990 .

[67]  Reuter,et al.  Influence of surfactants in Ge and Si epitaxy on Si(001). , 1990, Physical review. B, Condensed matter.

[68]  Reuter,et al.  Surfactants in epitaxial growth. , 1989, Physical review letters.

[69]  Hamberg,et al.  Band-gap tailoring of ZnO by means of heavy Al doping. , 1988, Physical review. B, Condensed matter.

[70]  H. Nanto,et al.  Highly Conductive and Transparent Silicon Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering , 1986 .

[71]  H. Nanto,et al.  The stability of aluminium-doped ZnO transparent electrodes fabricated by sputtering , 1986 .

[72]  Shinzo Takata,et al.  The stability of zinc oxide transparent electrodes fabricated by R.F. magnetron sputtering , 1984 .

[73]  D. Grempel,et al.  Electronic specific-heat anomalies in two-dimensional systems , 1982 .

[74]  S. Maniv,et al.  Pressure and angle of incidence effects in reactive planar magnetron sputtered ZnO layers , 1982 .

[75]  A. P. Roth,et al.  Absorption edge shift in ZnO thin films at high carrier densities , 1981 .

[76]  Karl-Fredrik Berggren,et al.  Band-gap narrowing in heavily doped many-valley semiconductors , 1981 .

[77]  Jacques I. Pankove,et al.  Optical Processes in Semiconductors , 1971 .

[78]  P. A. Wolff,et al.  Theory of the Band Structure of Very Degenerate Semiconductors , 1962 .

[79]  E. Burstein.  Anomalous Optical Absorption Limit in InSb , 1954 .