Back biasing effects in a feedback steep switching device with charge spacer

In this work, the back gate bias (V<sub>BG</sub>) effect on the threshold voltage (V<sub>T</sub>) of a feedback steep switching device has been studied using TCAD simulations. Unlike other devices, there was a region where V<sub>T</sub> of a feedback switching device was increased even though V<sub>BG</sub> was increased due to the raised hole barrier. These findings indicate that a new V<sub>T</sub> modulation method is required other than ground plane or V<sub>BG</sub> schemes.