Analytical assistance in semiconductor and electronic material technology

[1]  H. J. Tolle.  Interface analysis of high insulating garnet materials using secondary ion mass spectrometry , 1982 .

[2]  P. Franken,et al.  The grain boundary of SrTiO3 boundary layer capacitor material , 1981 .

[3]  J. Walls.  The application of surface analytical techniques to thin films and surface coatings , 1981 .

[4]  W. Tolksdorf,et al.  Electron probe microanalysis of epitaxial garnet films , 1981 .

[5]  W. Stacy,et al.  Examination of Grain Boundaries of Mn‐Zn Ferrites by AES and TEM , 1980 .

[6]  J. Poorter,et al.  Assessment of defects in as-grown III-V multilayer structures by differentiated cathodoluminescence topography (DCLT) , 1980 .

[7]  I. Gale,et al.  Quantitative measurement of impurities in gallium arsenide , 1980 .

[8]  Y. Tamminga,et al.  Aluminum‐silicide reactions. I. Diffusion, compound formation, and microstructure , 1979 .

[9]  H. Werner,et al.  Modern Methods for Solid Surface and Thin Film Analysis , 1978 .

[10]  W. Bartels,et al.  X-ray double-crystal diffractometry of Ga1−xAlxAs epitaxial layers , 1978 .

[11]  H. Werner,et al.  Secondary ion mass spectrometry of compositional changes in garnet films , 1975 .

[12]  C. Langereis,et al.  Cobalt silicide layers on Si. I. Structure and growth , 1975 .

[13]  B. Smets,et al.  Surface analysis of glass in the electronics industry , 1983 .

[14]  H. Baumgart,et al.  SIMS Investigation of p-n Junction Quality in Ion Implanted cw Laser Annealed Silicon , 1982 .

[15]  A. Huber,et al.  Impurity Redistribution in GaAS Epilayers , 1982 .

[16]  J. Clegg.  The Optimisation of SIMS for the Analysis of Semiconductor Materials , 1982 .

[17]  F. Rüdenauer.  Instrumental Aspects of Spatially 3-Dimensional SIMS Analysis , 1982 .

[18]  J. Jansen,et al.  Analysis of thin layers by means of spark-source mass spectrometry , 1981 .

[19]  P. Balk,et al.  Sn incorporation and electron concentration in vapor‐phase epitaxially grown GaAs , 1981 .

[20]  H. Werner.  Modern methods for thin film and surface analyses , 1980 .

[21]  A. Oostrom,et al.  Characterization of AlxGa1−xAs–GaAs layer structures by scanning Auger electron microscopy , 1980 .

[22]  N. T. Linh,et al.  Chromium and Iron Determination in GaAs Epitaxial Layers , 1979 .

[23]  H. Werner.  Introduction to Secondary Ion Mass Spectrometry (SIMS) , 1978 .

[24]  W. Tolksdorf,et al.  Crystal Growth of Magnetic Garnets from High-Temperature Solutions , 1978 .

[25]  H. Werner.  Applications of Secondary Ion Mass Spectrometry (SIMS) , 1977 .

[26]  H. Werner,et al.  Profiles of boron implantations in silicon measured by secondary ion mass spectrometry , 1973 .