Spectroscopic Study on the Enhanced Excitation of an Electron Cyclotron Resonance Nitrogen Plasma by Pulsed Laser Ablation of an Aluminum Target
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[1] F. Belloni,et al. Laser-induced plasmas from the ablation of metallic targets: The problem of the onset temperature, and insights on the expansion dynamics , 2007 .
[2] J. D. Wu,et al. Spectroscopic study on pulsed laser ablation of graphite target in ECR nitrogen plasma for carbon nitride film deposition , 2006 .
[3] Chien-Liang Lin,et al. Effects of post treatment on the field emission properties of CNTs grown by ECR-CVD , 2006 .
[4] Jian Sun,et al. Low-temperature synthesis of gallium nitride thin films using electron cyclotron resonance plasma assisted pulsed laser deposition from a GaAs target , 2005 .
[5] Y. Harada,et al. ECR-assisted MBE growth of In1−xGaxN heteroepitaxial films on Si , 2004 .
[6] S. T. Lee,et al. Deposition of large-area, high-quality cubic boron nitride films by ECR-enhanced microwave-plasma CVD , 2003 .
[7] J. D. Wu,et al. Influences of substrate bias on the composition and structure of carbon nitride thin films prepared by ECR-plasma assisted pulsed laser deposition , 2002 .
[8] J. D. Wu,et al. Electron cyclotron resonance plasma-assisted reactive pulsed laser deposition of compound films , 2002 .
[9] J. D. Wu,et al. Low-temperature synthesis of AlN films through electron cyclotron resonance plasma-aided reactive pulsed laser deposition , 2001 .
[10] J. D. Wu,et al. Silicon nitride films synthesized by reactive pulsed laser deposition in an electron cyclotron resonance nitrogen plasma , 1999 .
[11] C. Bindhu,et al. Dynamics of laser produced silver plasma under film deposition conditions studied using optical emission spectroscopy , 1998 .
[12] M. Paisley,et al. Gas-source molecular beam epitaxy of III–V nitrides , 1997 .
[13] C. Flamini,et al. AIN thin film deposition by pulsed laser ablation of Al in NH3 , 1997 .
[14] T. Kerdja,et al. Dynamics of laser‐produced carbon plasma in an inert atmosphere , 1996 .
[15] W. Lee,et al. C-axis orientation of AlN films prepared by ECR PECVD , 1996 .
[16] David B. Geohegan,et al. Dynamics of laser ablation plume penetration through low pressure background gases , 1995 .
[17] Theodore D. Moustakas,et al. Growth of GaN by ECR-assisted MBE , 1993 .
[18] R. K. Thareja,et al. Studies on recombining Al‐plasma using 1.06, 0.532, 0.355, and 0.266 μm laser radiation , 1992 .
[19] R. White,et al. Surface modification of polyimide by ECR plasma , 1991 .
[20] C. Tsai. Potential applications of a new microwave ECR multicusp plasma ion source , 1991 .
[21] L. Berry,et al. Electron cyclotron resonance microwave ion sources for thin film processing , 1991 .
[22] N. Cheung. Plasma immersion ion implantation for ULSI processing , 1991 .
[23] Tsuneo Mitsuyu,et al. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method , 1989 .
[24] J. Asmussen. Electron cyclotron resonance microwave discharges for etching and thin‐film deposition , 1989 .