Understand and Avoid Electromigration (EM) & IR-drop in Custom IP Blocks

Advances in process technology and changing design styles are increasing the impact of electromigration (EM) and IR-drop effects on the performance and reliability of analog, mixed-signal, memory and custom digital IP blocks at 28nm and below. In this white paper, we discuss the various trends exacerbating EM and IR-drop effects as well as design and analysis techniques to avoid them, and introduce Synopsys’ transistor-level analysis solution, which includes CustomSim ™ for FastSPICE circuit simulation, StarRC