전력용 IGBT의 미시적인 모델링에 의한 소자특성 및 전압형 인버터 시뮬레이션

An micro model for the power Insulated Gate Bipolar Transistor(lGBT) is developed The, model consistently described the IGBT stealy-state current-voltage char￣acteristics and switching transient current and voltage waveform for all loa야ng conditions. The model is based on the equivalent circuit of a MOSFET with supplies Ow base current to a low-l4nin, high-level injection, bipolar transistor with its base virtual contact fit the collector and of thr base Model results are compared with measured turn-on and turn-off waveform for different dhive, load, and feedback circuils.