论文信息 - Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching - 字舞流文

Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching

M. Loboda | G. Chung | M. Dudley | B. Raghothamachar | D. Hansen | S. Sun | S. Mueller | E. Sanchez | S. Byrappa | F. Wu | Huanhuan Wang | Shayan Byrappa