Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamics

Dislocation core structures in elemental semiconductors (ESC) and III-V compound semiconductors (CSC) with zinc blende structure are discussed in relation to their analogy with fcc metals. Emphasis is also put on the specific features of dislocations in SC at temperatures lower than 0,6 T m when dislocation glide is controlled by the Peierls mechanism reflecting the strong covalent bonding of the atoms. Dislocation dynamics relevant to classical metallurgical effects or to specific effects associated with electronic levels introduced by dislocations in the band gap are reviewed. Analogies and differences between dislocation structures and properties in ESC and CSC are also discussed Les structures de cœur des dislocations dans les semiconducteurs elementaires (ESC) et les composes semiconducteurs (CSC) III-V sont discutees en relation avec les analogies qu'elles presentent avec celles des metaux c.f.c. L'accent est mis sur les proprietes specifiques des dislocations aux temperatures plus basses que 0,6 Tf ou le glissement des dislocations est regi par un mecanisme de Peierls. Revue de la dynamique des dislocations en rapport avec des effets metallurgiques classiques ou des effets specifiques aux semiconducteurs associes aux niveaux electroniques introduits par les dislocations dans la bande interdite. Analogies et differences entre les structures et les proprietes des dislocations dans les ESC et CSC

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