Integration of a 90nm RF CMOS technology (200GHz f,,, - 150GHz fT NMOS) demonstrated on a 5GHz LNA

The potential for low power RF systems on chip of a 90nm CMOS technology is demonstrated for the first time on a monolithic 5GHz low noise amplifier. This technology combines a portfolio of high Q passive components with high RF performances 70nm physical gate length NMOSETs (200GHz f,,,,-150GHe fT) presenting a ratio power gaidcurrent gain higher than 1 up to the maximum measurement frequency.