One-bit non-volatile memory cell using memristor and transmission gates

In recent researches, much emphasis has been placed in developing non-volatile memories as candidates for replacement of volatile memories. Apart from non-volatility, memristive devices also have high switching speed, low energy consumption, and small device size. In this article, a novel one-bit memory cell using two transmission gates and one memristor (2TG1M) is proposed. SPICE simulations were performed to compare energy requirements per one-bit memory cell between the proposed memory cell and the conventional volatile one-bit SRAM cell. Simulations show that the SRAM memory cell requires between 73.034 pJ and 12.433 nJ to retain logic information for 10 years, while the proposed memory cell requires less than 1 pJ to hold logic information for up to 10 years. The proposed memory cell is also simulated against the popular one transistor one memristor (1T1M) non-volatile memory cell to show faster switching speed by 1.5 times. This work concludes the advantages of the proposed 2TG1M nonvolatile memory cell against volatile memory in terms of energy requirements, and against non-volatile memory in terms of switching speed.

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